FILM FORMING METHOD AND FILM FORMING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a film forming method capable of forming a silicon oxide film having a high density and a high stress on a workpiece surface.

SOLUTION: A film forming method for forming a silicon oxide film on the surface of a workpiece W in a processing container 14 comprises: an absorption step of absorbing a seed gas composed of silane-based gas to the workpiece surface by supplying the seed gas into the processing container; a film formation step of forming a silicon film to which an impurity was added by supplying a silicon-containing gas which is material gas and an additive gas including the impurity into the processing container; and an oxidation step of converting a silicon film to a silicon oxide film by oxidizing the silicon film. This forms a silicon oxidation film having a high density and a high stress on the workpiece surface.

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