| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a drift phenomenon of drain current. <P>SOLUTION: A semiconductor device of the present invention includes: an FET 41 comprising a semiconductor layer including a channel layer composed of a nitride semiconductor, and a source electrode, a gate electrode and a drain electrode, which are formed on the semiconductor layer; a light source 43 for irradiating the semiconductor layer between the gate and drain electrodes of the FET 41 with light; and a package 45 accommodating the FET 41 and the light source 43. <P>COPYRIGHT: (C)2012,JPO&INPIT |
