| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device in which metal silicide layers of approximately same level of quantity are formed in a memory cell region and a peripheral circuit region, respectively. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a memory cell region and a peripheral circuit region provided on the semiconductor substrate 1, a gate electrode having a gate insulator 7 and a conductive layer 10 with a metal silicide upper portion on the memory cell region, and a gate electrode having the gate insulator 7 and the conductive layer 10 with a metal silicide upper portion on the peripheral circuit region. A metal silicide layer 10b of the conductive layer 10 of the gate electrode on the peripheral circuit region has a plurality of recesses on a top face and a plurality of salients on an under surface corresponding to the plurality of recesses. <P>COPYRIGHT: (C)2012,JPO&INPIT |
