发明名称 |
PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS |
摘要 |
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support. |
申请公布号 |
WO2012018368(A2) |
申请公布日期 |
2012.02.09 |
申请号 |
WO2011US01270 |
申请日期 |
2011.07.18 |
申请人 |
LAM RESEARCH CORPORATION;RICCI, ANTHONY;SAURABH, ULLAL;MARTINEZ, LARRY |
发明人 |
RICCI, ANTHONY;SAURABH, ULLAL;MARTINEZ, LARRY |
分类号 |
H05H1/24;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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