发明名称 PARASITIC PLASMA PREVENTION IN PLASMA PROCESSING CHAMBERS
摘要 Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
申请公布号 WO2012018368(A2) 申请公布日期 2012.02.09
申请号 WO2011US01270 申请日期 2011.07.18
申请人 LAM RESEARCH CORPORATION;RICCI, ANTHONY;SAURABH, ULLAL;MARTINEZ, LARRY 发明人 RICCI, ANTHONY;SAURABH, ULLAL;MARTINEZ, LARRY
分类号 H05H1/24;H01L21/205;H01L21/3065 主分类号 H05H1/24
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