| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that occupies a smaller area, that can achieve higher integration, and that can have higher storage capacity. <P>SOLUTION: In a transistor including a control gate and a storage gate, the storage gate of the transistor is made conductive, and after the supply of a particular potential to the storage gate, the storage gate is insulated to hold the potential. Data writing is performed by making the potential of the control gate a potential that makes the storage gate conductive, supplying the potential of the data to be stored in the storage gate, and then making the potential of the control gate a potential that makes the storage gate insulated. Data readout is performed by supplying a predetermined readout potential to a readout signal line connected to either a source or a drain of the transistor and then detecting the potential change of a bit line connected to the other of the source or the drain. <P>COPYRIGHT: (C)2012,JPO&INPIT |
