| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily integrate an enhancement-mode FET and a depletion-mode FET. <P>SOLUTION: A semiconductor device comprises: a channel layer 14 composed of a first nitride semiconductor; an electron supply layer 16 that is provided on the channel layer and is composed of a second nitride semiconductor having a larger band gap than that of the first nitride semiconductor; an enhancement-mode FET including a first gate electrode 28 that is formed on the electron supply layer and forms a Schottky junction; and a depletion-mode FET including a second gate electrode 30 formed via a gate insulating film on the electron supply layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
