| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of fitting threshold voltages of MISFETs having High-k gate insulating films whose interface layer film thicknesses differ. <P>SOLUTION: A semiconductor device manufacturing method of an embodiment comprises: a step of forming a silicon oxide film 20 in a first region on a semiconductor substrate 11 and a silicon oxide film 21 in a second region; a step of forming a hafnium oxide film 22 on the silicon oxide films 20 and 21; a step of forming a film 23 including an additional element consisting of at least one element of Mg, La, Y, Dy, Sc, and Al on the hafnium oxide film 22; a step of performing heat treatment after the step of forming the film 23 including the additional element and dispersing the additional element into the silicon oxide films 20 and 21; and a step of forming a metal gate electrode on the hafnium oxide film 22 on the silicon oxide film 20 and on the hafnium oxide film 22 on the silicon oxide film 21. <P>COPYRIGHT: (C)2012,JPO&INPIT |
