| 摘要 |
A light-emitting diode chip is specified, comprising - an n-conducting region (1), - a p-conducting region (2), - an active region (3) between the n-conducting region (1) and the p-conducting region (2), - a mirror layer (4) at that side of the p- conducting region (2) which is remote from the active region ( 3 ), - an encapsulation layer (5) at that side of the mirror layer (4) which is remote from the p-conducting region ( 2 ), and - a contact layer (6) at a side of the encapsulation layer (5) which is remote from the mirror layer (4), wherein - the encapsulation layer (5) extends along a bottom area (43) of the mirror layer (4) which is remote from the p-conducting region (2) and a side area (42) of the mirror layer (4) which runs transversely with respect to the bottom area (43), and - the contact layer (6) is freely accessible in places from its side facing the n-conducting region (1). |
