发明名称 |
Bit Set Modes for a Resistive Sense Memory Cell Array |
摘要 |
Various embodiments of the present invention are generally directed to a method and apparatus for providing different bit set modes for a resistive sense memory (RSM) array, such as a spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) array. In accordance with some embodiments, a group of RSM cells in a non-volatile semiconductor memory array is identified for application of a bit set operation. A bit set value is selected from a plurality of bit set values each separately writable to the RSM cells to place said cells in a selected resistive state. The selected bit set value is thereafter written to at least a portion of the RSM cells in the identified group. |
申请公布号 |
US2012033482(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113274876 |
申请日期 |
2011.10.17 |
申请人 |
CHEN YIRAN;REED DANIEL S.;LU YONG;LIU HARRY HONGYUE;LI HAI;BOWMAN ROD V.;SEAGATE TECHNOLOGY LLC |
发明人 |
CHEN YIRAN;REED DANIEL S.;LU YONG;LIU HARRY HONGYUE;LI HAI;BOWMAN ROD V. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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