METHOD FOR DEPOSITING CYCLIC THIN FILM

摘要

Provided is a method for depositing a cyclic thin film for providing an excellent film quality and step coverage. The method for depositing a cyclic thin film according to one embodiment of the present invention comprises: a deposition step for depositing a silicon on a substrate by injecting silicon precursors inside a chamber loaded with a substrate; a first purge step for removing unreacted silicon precursors and reaction byproducts from the inside of the chamber; a reaction step for forming the deposited silicon into an insulation film having a silicon by providing a first reaction gas inside the chamber; a insulation film deposition step for repeating a second purge step for removing unreacted reaction gas and the reaction byproducts from the inside of the chamber; and a densification step for densifying the insulation film having silicon formed by providing plasma atmosphere inside the chamber.