Provided is a method for depositing a cyclic thin film that can provide an excellent film quality and step coverage. The method for depositing cyclic thin film according to one embodiment of the present invention comprises: a step for forming a silicon thin film on a substrate by repeating a step for depositing the silicon on a substrate by injecting silicon precursors inside a chamber loaded with the substrate, and a first purge step for removing unreacted silicon precursors and reaction byproducts from the inside of the chamber; and a step for forming the silicon thin film into an insulation film having silicon by forming a plasma atmosphere inside the chamber.
申请公布号
WO2012018210(A2)
申请公布日期
2012.02.09
申请号
WO2011KR05649
申请日期
2011.08.01
申请人
EUGENE TECHNOLOGY CO., LTD.;KIM, HAI WON;WOO, SANG HO