发明名称 METHOD FOR DEPOSITING CYCLIC THIN FILM
摘要 Provided is a method for depositing a cyclic thin film that can provide an excellent film quality and step coverage. The method for depositing cyclic thin film according to one embodiment of the present invention comprises: a step for forming a silicon thin film on a substrate by repeating a step for depositing the silicon on a substrate by injecting silicon precursors inside a chamber loaded with the substrate, and a first purge step for removing unreacted silicon precursors and reaction byproducts from the inside of the chamber; and a step for forming the silicon thin film into an insulation film having silicon by forming a plasma atmosphere inside the chamber.
申请公布号 WO2012018210(A2) 申请公布日期 2012.02.09
申请号 WO2011KR05649 申请日期 2011.08.01
申请人 EUGENE TECHNOLOGY CO., LTD.;KIM, HAI WON;WOO, SANG HO 发明人 KIM, HAI WON;WOO, SANG HO
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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