| 摘要 |
<P>PROBLEM TO BE SOLVED: To separate a material layer from a substrate without breaking the material layer formed on the substrate. <P>SOLUTION: To separate a material layer 2 from a substrate 1 at the interface between the substrate 1 and the material layer 2, a work 3 including the material layer 2 on the substrate 1 is irradiated with pulsed laser light through the substrate 1 while the irradiation region on the work 3 is changed from moment to moment so that the adjacent irradiation regions overlap with each other. The irradiation region on the work with the pulsed laser light is set to satisfy the relation S/L≤0.125 where S (mm<SP POS="POST">2</SP>) is the area of the irradiation region and L (mm) is the peripheral length of the irradiation region. The intensity of the laser light in the region where the laser light overlap is set in the range of VE×1 to VE×1.15 where VE is the decomposition threshold of GaN. This allows the material layer to be separated from the substrate for sure without breaking the material layer formed on the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
