发明名称 PRETREATMENT METHOD OF FILM FORMING BASE MATERIAL, METHOD OF FORMING THIN FILM TO FILM FORMING BASE MATERIAL, PLASMA CVD DEVICE, VAPOR DEPOSITION DEVICE, SPUTTERING DEVICE, AND PLASTIC BASE MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a thin film to a film forming base material capable of adequately assuring adhesion between the thin film and the film forming base material. <P>SOLUTION: In the method of forming the thin film to the film forming base material, any of oxygen plasma treatment, ozone treatment, ultraviolet irradiation treatment is applied to a surface of the film forming base material 2 made of plastic or a material in which at least one of SiO<SB POS="POST">2</SB>and Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>is dispersed to plastic. Then, on the surface of the film forming base material 2, the thin film is formed by any of a plasma CVD method, sputtering method, and vapor deposition method. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012026000(A) 申请公布日期 2012.02.09
申请号 JP20100165985 申请日期 2010.07.23
申请人 UTEC:KK 发明人 ABE KOJI;TERASHIMA KEIICHI
分类号 C23C16/02;C23C14/02 主分类号 C23C16/02
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