发明名称 VAPOR DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that can feed a vapor of a film-forming material generated in a vapor generator to a vapor deposition head without lowering the temperature of the vapor. <P>SOLUTION: The vapor deposition apparatus 13 performs film forming processing of an object G to be processed by vapor deposition. The vapor deposition apparatus 13 is configured such that: a processing chamber 30 where the object G is subjected to the film forming processing and a vapor generation chamber 31 where a film-forming material is evaporated, are adjacently arranged; and exhaust mechanisms 36, 41 which reduce the pressure inside the processing chamber 30 and inside the vapor generation chamber 31 and vapor deposition units 55-60 which feed the vapor of the film-forming material into the processing chamber 30, are included therein. The vapor deposition units 55-60 includes: a vapor outlet 80 which blows out the vapor of the film-forming material toward the inside of the processing chamber 30; vapor generators 70-72 for evaporating the film-forming material in the vapor generation chamber 31; control valves 75-77 for controlling the supply of the vapor of the film-forming material; and flow passages 81-83, 85 which supply the vapor of the film-forming material generated in the vapor generators 70-72 to the vapor outlet 80 without emitting the vapor to the outside of the processing chamber 30 and the vapor generation chamber 31. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012026041(A) 申请公布日期 2012.02.09
申请号 JP20110236147 申请日期 2011.10.27
申请人 TOKYO ELECTRON LTD 发明人 WATANABE SHINGO;ONO YUJI;HASEGAWA KOSUKE;OGAWA MASAHIRO;HONDA KOICHI
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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