发明名称 Memristive Junction with Intrinsic Rectifier
摘要 A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
申请公布号 US2012032134(A1) 申请公布日期 2012.02.09
申请号 US200913258499 申请日期 2009.07.10
申请人 YANG JIANHUA;STRACHAN JOHN PAUL;PICKETT MATTHEW D. 发明人 YANG JIANHUA;STRACHAN JOHN PAUL;PICKETT MATTHEW D.
分类号 H01L45/00;H01L21/02 主分类号 H01L45/00
代理机构 代理人
主权项
地址