发明名称 |
Memristive Junction with Intrinsic Rectifier |
摘要 |
A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
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申请公布号 |
US2012032134(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US200913258499 |
申请日期 |
2009.07.10 |
申请人 |
YANG JIANHUA;STRACHAN JOHN PAUL;PICKETT MATTHEW D. |
发明人 |
YANG JIANHUA;STRACHAN JOHN PAUL;PICKETT MATTHEW D. |
分类号 |
H01L45/00;H01L21/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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地址 |
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