发明名称 AIR THROUGH-SILICON VIA STRUCTURE
摘要 A silicon substrate (201) has a conductive via (206) extending from a first surface (306) of the silicon substrate through the silicon substrate to a second surface (308) of the silicon substrate. A dielectric via (204,310) extends from the second surface of the silicon substrate toward the first surface of the silicon substrate.
申请公布号 WO2012018415(A1) 申请公布日期 2012.02.09
申请号 WO2011US31371 申请日期 2011.04.06
申请人 XILINX, INC. 发明人 KIM, NAMHOON;KIM, DONG, W.;WU, PAUL, Y.
分类号 H01L23/48;H01L23/14;H01L23/498 主分类号 H01L23/48
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