发明名称 |
AIR THROUGH-SILICON VIA STRUCTURE |
摘要 |
A silicon substrate (201) has a conductive via (206) extending from a first surface (306) of the silicon substrate through the silicon substrate to a second surface (308) of the silicon substrate. A dielectric via (204,310) extends from the second surface of the silicon substrate toward the first surface of the silicon substrate. |
申请公布号 |
WO2012018415(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
WO2011US31371 |
申请日期 |
2011.04.06 |
申请人 |
XILINX, INC. |
发明人 |
KIM, NAMHOON;KIM, DONG, W.;WU, PAUL, Y. |
分类号 |
H01L23/48;H01L23/14;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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