发明名称 SELF-PASSIVATING MECHANICALLY STABLE HERMETIC THIN FILM
摘要 <p>A hermetic thin film includes a first inorganic layer and a second inorganic layer contiguous with the first inorganic layer, wherein the second inorganic layer is formed as a reaction product of the first inorganic layer with oxygen and has a molar volume that is about -1% to 15% greater than a molar volume of the first inorganic layer. An equilibrium thickness of the second inorganic layer is at least 10% of but less than an as-deposited thickness of the first inorganic layer.</p>
申请公布号 WO2012018487(A1) 申请公布日期 2012.02.09
申请号 WO2011US43772 申请日期 2011.07.13
申请人 CORNING INCORPORATED;AN, CHONG PYUNG;QUESADA, MARK, A 发明人 AN, CHONG PYUNG;QUESADA, MARK, A
分类号 C23C14/08;C03C3/247;C23C14/58;H01L51/52 主分类号 C23C14/08
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