manufacturing method of ZnCoO hydrogen storage semiconductor

摘要

PURPOSE: A method for manufacturing zinc-cobalt oxide(ZnCoO) hydrogen storing material is provided to improve the storage capacity of hydrogen by coating platinum or palladium on the surface of a ZnCoO thin film or ZnCoO powder and injecting hydrogen. CONSTITUTION: A method for manufacturing a ZnCoO hydrogen storing material coats platinum or palladium on the surface of a ZnCoO thin film or ZnCoO powder and injecting hydrogen based on post-treatment. The ZnCoO thin film is obtained by an RF magnetron sputtering process. A method for the RF magnetron sputtering process includes the following: one of ZnCoO targets, ZnO and Co targets, and Zn and Co targets is mounted in a vacuum chamber; a high vacuum state is generated in the vacuum chamber; a substrate mounted at a position facing to the targets is heated; and mixed gas with argon or hydrogen is injected into the vacuum chamber.