Power electronic device and manufacturing method of the same

摘要

PURPOSE: A power electronic device and a manufacturing method thereof are provided to reduce a breakdown voltage by forming a field plate at a lower part of a gate region. CONSTITUTION: A second semiconductor layer(11) is formed on an upper side of a semiconductor layer(10). A source(12a), a drain(12b), and a gate(13) are formed on the second semiconductor layer. A field plate(15) includes two-dimensional electron gas layer domain. The field plate is formed on a lower side of the semiconductor layer. The two-dimensional electron gas layer is formed on an interface between a first semiconductor layer and the second semiconductor layer.