| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a plasma device in which a large substrate can be processed stably even in a frequency region of a VHF band by minimizing ground impedance. <P>SOLUTION: A plasma device comprises a stage moving mechanism which adjusts the interval of a stage and a shower plate, and a conductive current-carrying member which short-circuits the periphery of the stage and the inner wall surface of a vacuum chamber adjacent thereto out of a ground path from the stage to ground means. The current-carrying member has an electric contact which slides along the movement of the stage, and the electric contact is shielded from the plasma of gas generated between the shower plate and a substrate by high frequency power. <P>COPYRIGHT: (C)2012,JPO&INPIT |
