| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress attachment of miscellaneous crystals on a nitrogen surface of a GaN self-standing substrate, and wastage of raw materials in production of GaN by the flux method. <P>SOLUTION: There are shown four examples of arrangement methods of crucibles 26-1 to 26-4 and GaN self-standing substrates. In Fig.1.A, the nitrogen surface of a self-standing substrate 10 is closely contacted with a planar inner wall facing obliquely upward of a crucible 26-1. In Fig.1.B, the nitrogen surface of a self-standing substrate 10 is closely contacted with a planar inner wall facing horizontally of a crucible 26-2, and fixed using a fixture ST-2. In Fig.1.C, a fixture ST-3 is arranged on the flat bottom of a crucible 26-3, and the nitrogen surfaces of self-standing substrates 10-1 and 10-2 are mutually closely contacted. In Fig.1.D, a fixture ST-4 is arranged on the flat bottom of a crucible 26-4, and a GaN self-standing substrate 10 is fixed thereto. The nitrogen surface of the self-standing substrate 10 is covered with the fixture ST-4. A mixed flux in which gallium and sodium are melted is filled, and a GaN single crystal is grown on a gallium surface F<SB POS="POST">Ga</SB>under pressurized nitrogen. <P>COPYRIGHT: (C)2012,JPO&INPIT |
