发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
摘要 A semiconductor device includes a first island and a first electrode. The first island includes a first semiconductor region, a first insulation region, and a first insulating film. The first semiconductor region has first and second side surfaces adjacent to the first insulation region and the first insulating film, respectively. The first electrode is adjacent to the first insulation region and the first insulating film. The first insulating film is between the first electrode and the first semiconductor region.
申请公布号 US2012032256(A1) 申请公布日期 2012.02.09
申请号 US201113192487 申请日期 2011.07.28
申请人 TAKAISHI YOSHIHIRO;NOJIMA KAZUHIRO;ELPIDA MEMORY, INC. 发明人 TAKAISHI YOSHIHIRO;NOJIMA KAZUHIRO
分类号 H01L29/78;H01L23/525 主分类号 H01L29/78
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