发明名称 |
METHODS OF FORMING A GATE STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
In a method of forming a gate structure, a gate pattern including a gate insulation layer pattern and a gate electrode sequentially stacked on a substrate is formed. The gate electrode includes a metal. A first plasma process is performed on the gate pattern using a reaction gas to reduce an oxidized edge portion of the gate electrode. The reaction gas includes nitrogen. A spacer is formed on a sidewall of the gate pattern. A threshold voltage is adjusted by reducing the oxidized edge portion of the gate electrode. Therefore, a semiconductor device including the gate pattern has excellent electrical characteristics. |
申请公布号 |
US2012034752(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113195521 |
申请日期 |
2011.08.01 |
申请人 |
KIM WEON-HONG;JUNG HYUNG-SUK;LIM HA-JIN;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM WEON-HONG;JUNG HYUNG-SUK;LIM HA-JIN |
分类号 |
H01L21/336;H01L21/02 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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