发明名称 |
Semiconductor Devices Having A Diffusion Barrier Layer and Methods of Manufacturing the Same |
摘要 |
Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region. |
申请公布号 |
US2012032332(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113191948 |
申请日期 |
2011.07.27 |
申请人 |
LIM HA JIN;DO JIN-HO;KIM WEON-HONG;SONG MOON-KYUN;JOO DAE-KWON |
发明人 |
LIM HA JIN;DO JIN-HO;KIM WEON-HONG;SONG MOON-KYUN;JOO DAE-KWON |
分类号 |
H01L29/49;H01L21/28 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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