METHOD FOR MULTI-LEVEL DRIVING OF ONE TRANSISTOR TYPE DRAM

摘要

A method for multi-level driving of one transistor type dram is provided to improve of the cell by preventing the break down of cell data. In a method for multi-level driving of one transistor type dram, data is maintained at the floating body for the t0 period. A MOS transistor is operated by shifting the voltage of the word line(WL) to the high level for t1 period. A low voltage(Vpre L) level is maintained at the source line(SL), the bit line(BL) is shifted to the negative voltage(NEG2) level. The word line is shifted to the negative voltage level for t2 period. The low voltage level is maintained at the source line, and the bit line is maintained by the negative voltage level. The hot carrier is emitted to the source line for t3 period and data retention(Hold) mode is performed for t4 period.