METHOD FOR FORMING STRAINED SEMICONDUCTOR CHANNEL AND SEMICONDUCTOR DEVICE

摘要

A method for forming a strained semiconductor channel and a semiconductor device are provided. The method includes the following steps: forming a SiGe relaxation layer on a semiconductor substrate; forming a dielectric layer on the SiGe relaxation layer, forming a dummy gate on the dielectric layer, the dielectric layer and the dummy gate composing a dummy gate structure; depositing an inter-layer dielectric layer, planarizing the inter-layer dielectric layer to expose the dummy gate; etching and removing the dummy gate and the dielectric layer to form an opening; selectively growing a semiconductor epitaxial layer in the opening; depositing a high-K dielectric layer and a metal layer; planarizing the metal layer and the high-K dielectric layer, and then removing the high-K dielectric layer and the metal layer which cover the inter-layer dielectric layer to form a metal gate.