An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.
申请公布号
WO2012017844(A1)
申请公布日期
2012.02.09
申请号
WO2011JP66791
申请日期
2011.07.19
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;NAGATSUKA, SHUHEI;MATSUZAKI, TAKANORI;INOUE, HIROKI;KATO, KIYOSHI