发明名称 MEMORY DEVICE
摘要 PURPOSE: A memory device is provided to implement a read/write operation in a bank group which does not perform a refresh operation by performing the refresh operation according to a bank group through a command. CONSTITUTION: A plurality of bank groups(BG0-BG3) include two or more banks. A plurality of address counter units(110_BG0-110_BG3) correspond to the plurality of bank groups. If a bank group refresh command is applied, the refresh operation of the selected bank group is performed by an address counting of an address counter unit.
申请公布号 KR20120012056(A) 申请公布日期 2012.02.09
申请号 KR20100073933 申请日期 2010.07.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, YONG GU
分类号 G11C11/401;G11C11/402;G11C11/403;G11C11/408 主分类号 G11C11/401
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