发明名称 METHOD OF MANUFACTURING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an EUV mask blank in which displacement of a glass substrate and problems caused thereby can be eliminated when the glass substrate is transported or a film is deposited thereon in a deposition system. <P>SOLUTION: In the method of manufacturing a reflective mask blank for EUV lithography (EUVL), a reflective layer which reflects EUV light, and an absorption layer which absorbs EUV light are formed at least in this order on one surface of a glass substrate, and a conductive film is formed on the other surface of the glass substrate. When at least one of the conductive film, the reflective layer and the absorption layer is formed on the glass substrate by dry deposition method, the glass substrate is supported using a support member which abuts against only a side that forms the boundary of the lateral face and the bottom face of the glass substrate, or a support member which supports only the outer edge of the bottom face of the glass substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012028631(A) 申请公布日期 2012.02.09
申请号 JP20100167302 申请日期 2010.07.26
申请人 ASAHI GLASS CO LTD 发明人 MITSUMORI TAKAHIRO;ISE HIROTOSHI;MAESHIGE KAZUNOBU;HAYASHI KAZUYUKI
分类号 H01L21/027;G03F1/22 主分类号 H01L21/027
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