NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the inter-cell interference effect.

SOLUTION: A nonvolatile semiconductor memory device 1 includes: a plurality of memory cells for nonvolatile recording of data determined by a threshold voltage; a plurality of word lines connected to the plurality of memory cells and including a first word line and a second word line which is an nth word line (where n is an integer more than or equal to 1) from the first word line; and a control circuit 11 which writes data to the memory cells by controlling the voltage of the word lines sequentially from the first word line to the second word line. The control circuit 11 applies the writing voltage to the second word line before writing the data to the memory cells connected to the first word line in a writing sequence for memory cells connected to the first word line.

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