POLISHING COMPOUND AND METHOD OF MANUFACTURING SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a polishing compound which reduces contamination of a wafer due to metal impurities effectively.

SOLUTION: The polishing compound and a composition for rinse reduce contamination of a wafer due to metal impurities effectively. The polishing compound contains a chelate agent, an alkali compound, silicon dioxide and water. The composition for rinse contains a chelate agent, an alkali compound and water. The chelate agent contained in the polishing compound and the composition for rinse has a higher ability of capturing at least one kind of element selected from nickel and copper than ethylene diamine tetraacetic acid.

COPYRIGHT: (C)2012,JPO&INPIT