| 摘要 |
A plasma processing apparatus includes: an evacuable chamber 11 for performing therein a plasma process on a substrate G; a susceptor 12 for mounting thereon the substrate G within the chamber 11; a dielectric window 30 provided to face the susceptor 12 via a processing space S; RF antennas 30a and 30b disposed in a space adjacent to the processing space S with the dielectric window 30; a gas supply unit 37 for supplying a processing gas into the processing space S; a high frequency power supply for applying a high frequency RFH to the RF antennas 30a and 30b, and generating plasma of the processing gas within the processing space S by an inductive coupling; and a protrusion 34 made of a dielectric material and provided on a bottom surface of the dielectric window 30 corresponding to an inter-position of the RF antennas 30a and 30b.
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