发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Disclosed is a semiconductor device which includes a base substrate; a lower electrode formed on a main surface of the base substrate; and an insulating film formed over the lower electrode and the main surface of the base substrate. The insulating film has a contact hole defined by a wall extending upwardly from the top surface of the lower electrode. The insulating film has a film density distribution in which a film density decreases with increasing distance from the main surface of the base substrate in the thickness direction. A width of the contact hole increases as the film density decreases. |
申请公布号 |
US2012032338(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113193645 |
申请日期 |
2011.07.29 |
申请人 |
KOMORI KENJI;OKI SEMICONDUCTOR CO., LTD. |
发明人 |
KOMORI KENJI |
分类号 |
H01L23/48;H01L21/28 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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