发明名称 TARGET FOR MAGNETRON SPUTTERING AND PROCESS FOR PRODUCTION THEREOF
摘要 <p>Provided is a target for use in magnetron sputtering, which can increase the amount of leakage magnetic flux during the magnetron sputtering compared with that achieved in conventional techniques without decreasing the content of a ferromagnetic metal element in the target. A target for use in magnetron sputtering, which contains a ferromagnetic metal element and comprises a magnetic phase (12) that contains the ferromagnetic metal element, multiple non-magnetic phases (14, 16) that contain the ferromagnetic metal element and that are composed of different constituent elements from each other or have different constituent element contents from each other, and an oxide phase (18), wherein each of the magnetic phase (12) and the multiple non-magnetic phases (14, 16) are separated from one another by the oxide phase (18).</p>
申请公布号 WO2012017952(A1) 申请公布日期 2012.02.09
申请号 WO2011JP67475 申请日期 2011.07.29
申请人 TANAKA KIKINZOKU KOGYO K.K.;MIYASHITA, TAKANOBU;GOTO, YASUYUKI 发明人 MIYASHITA, TAKANOBU;GOTO, YASUYUKI
分类号 C23C14/34;B22F9/08;C22C1/05;C22C19/07 主分类号 C23C14/34
代理机构 代理人
主权项
地址