| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device of an epitaxially-grown transparent conductive thin film, and a novel photoelectronics device having a multilayered structure formed of a crystal thin film. <P>SOLUTION: A base board 5 in a vacuum chamber is heated to 300°C to 500°C, and controlled into a range of 0.05 Pa to 0.3 Pa of inert gas pressure and 5×10<SP POS="POST">-4</SP>Pa to 1.5×10<SP POS="POST">-3</SP>Pa of oxygen partial pressure. By applying high-density plasma irradiation to the base board, the transparent conductive thin film is formed by epitaxially growing a thin film forming material on the crystal base board. <P>COPYRIGHT: (C)2012,JPO&INPIT |
