| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor-less memory which can prevent a change of a threshold voltage due to flowing out of carriers and improve the memory retention property without complicating structure of the memory. SOLUTION: In the capacitor-less memory which has a transistor, the transistor includes a source region, a drain region, an active layer region provided between the source region and the drain region, and a gate electrode adjacent to the active layer region with an insulating film interposed therebetween. The source region is formed of a semiconductor having a larger band gap than a band gap of a semiconductor of the active layer region and a band gap of a semiconductor of the drain region, and a heterojunction is formed between the source region and the active layer region. COPYRIGHT: (C)2009,JPO&INPIT
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