| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can form insulator films inside a microfabricated isolation trench having a high aspect ratio. <P>SOLUTION: The semiconductor device manufacturing method in which side faces in parallel with a channel direction of a plurality of gate electrodes provided on a semiconductor substrate via a gate insulator film are included as partial inner walls of isolation trenches provided between neighboring gate electrodes, comprises the steps of forming protective films covering side faces of the gate electrodes, forming isolation trenches by etching the semiconductor substrate using the gate electrodes with the side faces covered with the protective films as a mask, forming first insulator films by oxidation of surfaces of the isolation trenches to fill the bottom portions of the isolation trenches with the respective first insulator films and forming second insulator films on the first insulator films to fill the upper portions including the side faces of the gate electrodes with the respective second insulator films. <P>COPYRIGHT: (C)2012,JPO&INPIT |
