METHOD FOR FORMING SEMICONDUCTOR P-N JUNCTION LAYER BY USING AQUEOUS PHOSPHORIC ACID AND DEVICE FOR APPLYING THE SAME

摘要

The present invention relates to a method for forming a semiconductor p-n junction layer by using aqueous phosphoric acid, in which aqueous phosphoric acid is coated on a silicon surface uniformly by spraying the aqueous phosphoric acid in a state of super fine particles with a specially devised sprayer at a room temperature and an atmospheric pressure to a thickness of 0,2 mm 0,8 mm and diffuses thermally to form a p-n junction layer on a P-type surface of a substrate of semiconductor silicon. Also disclosed is a device for applying aqueous phosphoric acid to form a semiconductor p-n junction layer including a plate (2) for securing a silicon substrate (1) thereto, a transfer unit (10) for transferring the plate (2) to a stage (3) one pair of liquid spraying heads (20) arranged opposite to each other with an angle q therebetween over the stage (3) wherein the heads (20) mounted on the scanner (4) moves back and forth within a fixed section in a lateral direction for spraying the aqueous phosphoric acid to a surface of the silicicon substrate (1).