| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor (TFT) sensor and a method of manufacturing the TFT sensor. <P>SOLUTION: There is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer patterned in an island shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first contact hole and the second contact hole, the source electrode and the drain electrode being disposed on the etch stop layer so as to face each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
