| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing failures even when the semiconductor device is operated under a high temperature and a high voltage. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer provided on a substrate 10; a source electrode 20 and a drain electrode 22 that are provided on an active region on the semiconductor layer; a gate electrode 24 provided between the source electrode and the drain electrode on the semiconductor layer; a first nitride silicon film 26 that is provided on the semiconductor layer so as to cover the gate electrode and has a step portion 28 caused by the gate electrode; a first field plate 30 provided in contact with the top surface of the first silicon nitride film between the gate electrode and the drain electrode at a position apart from the step portion; a second silicon nitride film 32 provided in contact with the top surface of the first silicon nitride film so as to cover the first field plate; and a shield electrode 34 that is provided on the second silicon nitride film and extends from above the first field plate to above the gate electrode. The first field plate and the source electrode are electrically connected outside the active region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
