| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having compatibility of high S/N ratio with high dynamic range, while suppressing reduction of a photodiode area. <P>SOLUTION: A pixel cell 100 includes photodiode 101, transfer transistor 102, charge converter 103, reset transistor 105, and amplification transistor 104. Wiring 16 is attached to the pixel cell 100, and a switching unit 14 is connected to the wiring 16. By the attachment of the wiring 16, parasitic capacitance 107 is produced between the charge converter 103 and the wiring 16. The switching unit 14 has a function to selectively switch the potential condition of the wiring 16 between a ground potential and a potential following the potential of a signal line 15. When a storage charge Q of the photodiode 101 is large, the switching unit 14 is switched to the ground side, and when a storage charge Q of the photodiode 101 is few, the switching unit 14 is switched to the signal line 15 side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
