发明名称 |
Method for Fracturing and Forming a Pattern Using Circular Characters with Charged Particle Beam Lithography |
摘要 |
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of shots of circular or nearly-circular character projection characters, having at least two shots that overlap, can form a non-circular pattern on a surface. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming non-circular patterns on a surface using a plurality of circular or nearly-circular character projection shots, where at least two shots overlap, is also disclosed.
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申请公布号 |
US2012034554(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113274346 |
申请日期 |
2011.10.16 |
申请人 |
FUJIMURA AKIRA;TUCKER MICHAEL;D2S, INC. |
发明人 |
FUJIMURA AKIRA;TUCKER MICHAEL |
分类号 |
G03F1/78;G03F7/20;G06F17/50 |
主分类号 |
G03F1/78 |
代理机构 |
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代理人 |
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地址 |
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