发明名称 Method for Fracturing and Forming a Pattern Using Circular Characters with Charged Particle Beam Lithography
摘要 In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of shots of circular or nearly-circular character projection characters, having at least two shots that overlap, can form a non-circular pattern on a surface. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming non-circular patterns on a surface using a plurality of circular or nearly-circular character projection shots, where at least two shots overlap, is also disclosed.
申请公布号 US2012034554(A1) 申请公布日期 2012.02.09
申请号 US201113274346 申请日期 2011.10.16
申请人 FUJIMURA AKIRA;TUCKER MICHAEL;D2S, INC. 发明人 FUJIMURA AKIRA;TUCKER MICHAEL
分类号 G03F1/78;G03F7/20;G06F17/50 主分类号 G03F1/78
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