发明名称 |
METHOD OF READING DATA IN NON-VOLATILE MEMORY DEVICE, AND DEVICE THEREOF |
摘要 |
A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination. |
申请公布号 |
US2012033502(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113198750 |
申请日期 |
2011.08.05 |
申请人 |
EUN HEE SEOK;KIM JAE HONG;CHO KYOUNG LAE;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
EUN HEE SEOK;KIM JAE HONG;CHO KYOUNG LAE |
分类号 |
G11C16/26;G11C16/06 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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