发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate. |
申请公布号 |
US2012032269(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113272675 |
申请日期 |
2011.10.13 |
申请人 |
CHANG DONG-RYUL;LEE TAE-JUNG;KIM SUNG-HOAN;LEE SOO-CHEOL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG DONG-RYUL;LEE TAE-JUNG;KIM SUNG-HOAN;LEE SOO-CHEOL |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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