| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a contact of a ground electrode in a semiconductor manufacturing apparatus, which is provided with a conductive layer for suppressing the increase in contact resistance, and to provide the method for manufacturing the contact. <P>SOLUTION: A contact 12 is formed like a groove on a face opposite to a face coming into contact with a wafer, of a cooling function-equipped substrate support 2 provided in a semiconductor manufacturing apparatus and made of aluminum or an aluminum alloy. The bottom of the groove is provided with a conductive layer 15 which is formed by blowing nickel or nickel alloy powder in a solid-phase state by heated compressed gas while maintaining the solid-phase state. <P>COPYRIGHT: (C)2012,JPO&INPIT |
