| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory transistor having a structure using an island-shaped semiconductor and a nonvolatile semiconductor memory manufacturing method which can increase capacitance between a floating gate and a control gate. <P>SOLUTION: The nonvolatile semiconductor memory transistor comprises an island-shaped semiconductor 301 in which a source region 303, a channel region 304 and a drain region 302 are formed from a silicon substrate side in this order, a floating gate 306 disposed so as to surround an outer periphery of the channel region 304 sandwiching a tunnel insulation film 305 therebetween, a control gate 308a disposed so as to surround the floating gate 306 sandwiching an interpoly insulation film 307 therebetween, and a control gate line 308 electrically connected to the control gate 308a and extending in a predetermined direction. Between the floating gate 306 and an undersurface of the control gate 308a, between the floating gate 306 and an inner side face of the control gate 308a, and between the floating gate 306 and an undersurface of the control gate line 308, the interpoly insulation films 307 are sandwiched, respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
