| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING APPARATUS |
| 摘要 |
After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13). |
| 申请公布号 |
US2012034750(A1) |
申请公布日期 |
2012.02.09 |
| 申请号 |
US201013264660 |
申请日期 |
2010.10.28 |
| 申请人 |
SASAKI YUICHIRO;KUBOTA MASAFUMI;HAYASHI SHIGENORI |
发明人 |
SASAKI YUICHIRO;KUBOTA MASAFUMI;HAYASHI SHIGENORI |
| 分类号 |
H01L21/336;C23C16/455;C23C16/50 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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