| 摘要 |
Semiconductor devices (100) and methods of making the same. Each of the semiconductor devices includes a substrate (102) having a first surface (118) and an opposing second surface. A vertical capacitive element (104) is disposed on the first surface of the substrate. The vertical capacitive element comprises a plurality of parallel conductive plates (120b, 120d, 120f, 120h, 120j, 120l, 120n) extending transverse to the first surface of the substrate. Adjacent conductive plates are spaced a distance D from each other. A dielectric material (104) can be disposed in a space separating the adjacent conductive plates. Each of the conductive plates has a height-to-width (h/w) ratio greater than or equal to one. |
