| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique advantageous for making semiconductor device side surfaces fixed in form in a method of manufacturing semiconductor devices by breaking a substrate having a crystal structure such that a nonpolar or semipolar plane is made a principal surface. <P>SOLUTION: The method of manufacturing semiconductor devices comprises the steps of: using, as a principal surface, a nonpolar or semipolar plane of a substrate having a crystal structure to form a semiconductor layer on the principal surface; and irradiating the semiconductor layer of the substrate with laser light thereby to form a transformed portion ranging from a depth of 10 μm to shallower than 30 μm with respect to the surface of the semiconductor layer, or irradiating the backside of the substrate located on the side opposite to the principal surface with laser light thereby to form a transformed portion ranging from a depth of 10 μm to shallower than 30 μm with respect to the backside; breaking the substrate having the semiconductor layer to form semiconductor devices while using the transformed portion as a starting point. <P>COPYRIGHT: (C)2012,JPO&INPIT |
