发明名称 PLASMA PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a temperature adjustment unit for an electrostatic attraction electrode capable of controlling a temperature of a wafer during large-heat-input etching by application of high wafer bias electric power uniformly in a plane at a high speed over a wide temperature range. <P>SOLUTION: A refrigerant flow passage 2 provided to an electrostatic attraction electrode 1 is used as an evaporator, and the refrigerant flow passage 2, a compressor 7, a condenser 8, and a first expansion valve 9 are connected to constitute a direct expansion type refrigerating cycle. Further, a second expansion valve 10 is provided to the refrigerant flow passage between the electrostatic attraction electrode 1 and the compressor 7 to adjust the flow rate of a refrigerant, and then the refrigerant can be compressed in the refrigerant flow passage 2 of the electrostatic attraction electrode 1 to control a temperature of a wafer to a high-temperature side by raising a vaporization temperature of the refrigerant. Further, the refrigerant flow passage 2 is formed in thin cylindrical structure to keep deformation due to a refrigerant pressure to small deformation of a thin cylinder. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012028811(A) 申请公布日期 2012.02.09
申请号 JP20110223960 申请日期 2011.10.11
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TANDO TAKUMI;YOKOGAWA KATANOBU;IZAWA MASARU
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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